دیتاشیت SI7884BDP-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت | SI7884BDP-T1-GE3 |
|---|---|
| حجم فایل | 89.78 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 13 |
دانلود دیتاشیت SI7884BDP-T1-GE3 |
SI7884BDP-T1-GE3 Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SI7884BDP-T1-GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 4.6W;46W
- Total Gate Charge (Qg@Vgs): 77nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 3540pF@20V
- Continuous Drain Current (Id): 58A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@16A,10V
- Package: PowerPAK-SO-8
- Manufacturer: Vishay Intertech
